EL SEGUNDO, Calif.–(BUSINESS WIRE)–#GaN—Integra
Technologies announced today it has been awarded a two-year contract
by the U.S. Air Force to accelerate technology and manufacturing
readiness of its patented, Thermally-Enhanced GaN/SiC technology.
Integra’s GaN/SiC technology is ideal for high efficiency, solid-state
RF power applications including high power radar systems requiring
improved performance, increased range and reduced operating costs.
Integra
Technologies has developed its Thermally-Enhanced GaN/SiC to deliver
superior power and efficiency while operating at lower temperatures
which is a key enabler of next generation high performance radar
platforms. The Company is leveraging its domestic R&D and manufacturing
platform to optimize the GaN epitaxial wafer, device design and package
design. Additionally, the U.S. Air Force contract will enable robust
qualification of Integra’s Thermally Enhanced GaN/SiC for production.
“We are excited to work with the Air Force,” said Suja Ramnath,
President and CEO of Integra Technologies. “Through this effort, we have
the opportunity to commercialize our leap-ahead GaN/SiC technology to
meet the high efficiency performance and production readiness
requirements of the U.S. Department of Defense.”
About Integra Technologies
Founded in 1997, Integra is a
leading provider of RF and Microwave power semiconductor and pallet
solutions for mission-critical applications including state-of-the-art
radar, electronic warfare and advanced communications systems.
Contacts
Colleen Cronin
C3 Communications
[email protected]
